높은 dV / dt 디스크 유형 사이리스터 압력 조립 장치

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current required to trigger all units

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

20

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

    2.0

ms

I_TM = 50 A; V_D = 67% V_DRM

Gate pulse: V_G = 30 V; R_G = 10 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -5 V)

t_q

     80

ms

I_TM > 2000 A; di/dt = 25 A/ms;

V_R³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% V_DRM ;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery current

I_rr

      200

A

I_TM > 2000 A; di/dt = 25 A/ms;

V_R³ -50 V; T_j = 125 ^oC

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.012

^oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

0.002

^oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

 8000

 35.5

10000

44.4

lb.

kN

Weight

W

  3.5

1.60

Lb.

Kg.