빠른 제어 사이리스터 SCR DCR604

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

600

A

Sinewave,180^o conduction,T_c =65^oC

RMS value of on-state current

I_TRMS

940

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

7500

7200

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

235000

A²s

8.3 msec and 10.0 msec

Latching current

I_L

800

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

400

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.30

V

I_TM = 2000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

400

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from V_DRM£ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

10

A

Gate current required to trigger all units

I_GT

300

150

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.15

5

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

1.5

0.7

ms

I_TM = 50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

200

125

ms

I_TM = 500 A; di/dt = 25 A/ms;

V_R³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

mC

I_TM = 500 A; di/dt = 25 A/ms;

V_R³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.045

(1)

0.055

(2)

^oC/W

Double sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistamce - junction to

case

R_{Q (j-c)}

0.090

(1)

0.110

(2)

^oC/W

Single sided cooled *

(1) @ 2000 lb.; (2) @ 800 lb.

Thermal resistance - case to sink

R_{Q (c-s)}

.030

.060

^oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

3.6

11.1

kN

Weight

W

70

g