고전력은 사이리스터 전력 제어 100A를 구동합니다.

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

I_TAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

I_TRMS

RMS value of on-state current

100

A

Nominal value

I_TSM

Peak one cycle surge

(non repetitive) current

900

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 °C

I²t

I square t

4050

A²s

8.3 msec and 10.0 msec

I_L

Latching current

100

mA

V_D = 12 V; R_L= 12 ohms

I_H

Holding current

30

mA

V_D = 12 V; I = 1 A

V_TM

Peak on-state voltage

2.0

V

I_TM = 150 A; Duty cycle £ 0.01%;

T_j = 25 °C

di/dt

Critical rate of rise

of on-state current

non-repetitive

300

A/ms

Gate drive 20V, 20Ω, t_r≤1μs, T_j=T_jmax, anode voltage≤80% V_DRM

repetitive

50

BLOCKING

V_DRM

V_RRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

600

V

V_DSM

V_RSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

700

V

I_DRM

I_RRM

Repetitive peak off state current Repetitive peak reverse  current

10

mA

T_j = 125 °C ,V_RRM V_DRM applied

dV/dt

Critical rate of voltage rise

100

V/ms

T_J=T_Jmax, linear to 80% rated V_DRM

TRIGGEING

P_G(AV)

Average gate power dissipation

-

W

P_GM

Peak gate power dissipation

-

W

I_GM

Peak gate current

-

A

I_GT

Gate trigger current

200

mA

T_C = 25 °C

V_GT

Gate trigger voltage

3.0

V

T_C = 25 °C

V_T(T0)

Treshold voltage

1

V

r_T

Slope resistance

2.4

mΩ

V_GD

Gate non-trigger voltage

0.2

V

T_j = 125 °C

SWITCHING

t_q

Turn-off time

-

ms

T_j = 125 °C

t_d

Delay time

-

Gate current 1A, di/dt=1A/μs,

V_d=0.67%V_DRM, T_J=25 °C

Q_rr

Reverse recovery charge

-