높은 DV/DT 속도 TO-92 0.8A SCR
$39200-1999 Others
$32≥2000Others
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$39200-1999 Others
$32≥2000Others
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-BT169 10-30UA
상표: yzpst
원산지: 중국
LT(RMS): 0.8A
VTM: <1.5V
Tstg: -40~150℃
Tj: -40~110℃
LTSM: 10A
L2t: 0.5A2s
Dl/dt: 50A/μs
yzpst-bt169 scr
설명:
BT 1 6 9 SCR 시리즈는 높은 DV/DT 속도를 제공합니다.
전자기 인터페이스에 대한 강한 저항.
특히 잔류 전류 회로 차단기, 직선 머리, 점화기 등에 사용하는 것이 좋습니다.
기본 특징:
symboI |
vaIue |
unit |
lT(RMS) |
0.8 |
A |
VDRM/VRRM |
400/600/800 |
V |
VTM |
<1.5 |
V |
순수한 최고 등급 :
Parameter |
SymboI |
vaIue |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
operating junction temperature range |
Tj |
-40~110 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
400/600/800 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
400/600/800 |
V |
RMS on-state current (Tc=80℃) |
lT(RMS) |
0.8 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
lTSM |
10 |
A |
l2t value for fusing (tp=10ms) |
l2t |
0.5 |
A2s |
critical rate of rise of on-state current (lG=2xlGT) |
dl/dt |
50 |
A/μs |
Peak gate current |
lGM |
0.2 |
A |
Average gate power dissipation |
PG(AV) |
0.1 |
W |
Peak gate power |
PGM |
0.5 |
W |
전기적 특성 (달리 명시되지 않는 한 tj = 25k)
SymboI | vaIue | ||||
Test Condition | MlN | TYPE | MAX | unit | |
lGT | - | 20 | 200 | μA | |
VGT | VD=12V, RL=33Ω | - | 0.5 | 1 | V |
VD=VDRM Tj=110K | |||||
VGD | RL=3.3KΩ | 0.2 | - | - | V |
lH | lT=50mA | - | - | 2 | mA |
lL | lG=1.2lGT | - | - | 3 | mA |
VD=0.66XVDRM Tj=110K | |||||
dV/dt | G RGK=1KΩ | 20 | - | - | V/μs |
정적 특성
SymboI | Test Condition | vaIue | unit | ||
VTM | lTM=2A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
lDRM | VDRM= VRRM | Tj=25℃ | 5 | μA | |
lRRM | RGK=1KΩ | Tj=110℃ | MAX | 100 | μA |
패키지 기계적 데이터
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