25TTS08 800V 실리콘 제어 정류기 위상 제어 scr

Parameter

Symbol

Typ

Unit

Repetitive peak off-state voltages

VDRM

VRRM

800

V

Average on-state current

IT(AV)

16

A

RMS on-state current

IT(RMS)

25

A

Non-repetitive peak on-state current

ITSM

300

A

Max. Operating Junction

Temperature

Tj

110

oC

Storage Temperature

Tstg

-45~150

oC

Parameter

Symbol

Test  Conditions

Min

Typ

Max

Unit

Repetitive peak off-state voltages

VDRM

VRRM

-

800

-

V

Average on-state current

IT(AV)

o

-

16

-

A

RMS on-state current

IT(RMS)

all conduction angles

-

25

-

A

On-state voltage

VTM

o

-

-

1.25

V

Holding current

IH

VD =12 V; IGT = 0.1 A

-

-

100

mA

Latching current

IL

VD =12 V; IGT = 0.1 A

-

-

200

mA

Gate trigger current

IGT

VD =12 V; IT = 0.1 A

-

-

45

mA

Gate trigger voltage

VGT

VD =12 V; IT = 0.1 A

-

-

2.0

V