TO-220 scr 위상 제어 25A 트랜지스터 25TTS12

$0.252000-99999 Piece/Pieces

$0.22≥100000Piece/Pieces

제품 설명

제품 속성

모형: YZPST-25TTS12

상표: YZPST

포장 및 배송

판매 단위	:	Piece/Pieces
포장 종류	:	1. 정전기 방지 포장 2. 판지 상자 3. 플라스틱 보호 포장

제품 설명

위상 제어 SCR, 25 A

설명 / 특징

25TTS ... 실리콘 제어 정류기의 고전압 시리즈는 중전 력 스위칭 및 위상 제어 어플리케이션을 위해 특별히 설계되었습니다. 사용 된 유리 패시베이션 기술은 최대

125 ° C 접합 온도.

대표적인 애플리케이션은 입력 정류 (소프트 스타트)이며, 이들 제품은 동일한 패키지 외형으로 제공되는 Vishay HPP 입력 다이오드, 스위치 및 출력 정류기와 함께 사용하도록 설계되었다.

이 제품은 산업 차원에서 설계되고 검증되었습니다.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS

SINGLE-PHASE BRIDGE

THREE-PHASE BRIDGE

UNITS

Capacitive input filter TA = 55 °C, TJ = 125 °C, common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS
PARAMETER	TEST CONDITIONS	VALUES	UNITS
IT(AV)	Sinusoidal waveform	16	A
IRMS		25	A
VRRM/VDRM		800/1200	V
ITSM		300	A
VT	16 A, TJ = 25 °C	1.25	V
dV/dt		500	V/µs
dI/dt		150	A/µs
TJ		- 40 to 125	°C

VOLTAGE RATINGS
PART NUMBER	VRRM, MAXIMUM PEAK REVERSE VOLTAGE V	VDRM, MAXIMUM PEAK DIRECT VOLTAGE V	IRRM/IDRM AT 125 °C mA
25TTS08	800	800	10
25TTS12	1200	1200	10

ABSOLUTE MAXIMUM RATINGS
PARAMETER	SYMBOL	TEST CONDITIONS		VALUES		UNITS
				TYP.	MAX.
Maximum average on-state current	IT(AV)	TC = 93 °C, 180° conduction half sine wave		16		A
Maximum RMS on-state current	IRMS			25
Maximum peak, one-cycle, non-repetitive surge current	ITSM	10 ms sine pulse, rated VRRM applied		300
		10 ms sine pulse, no voltage reapplied		350
Maximum I2t for fusing	I2t	10 ms sine pulse, rated VRRM applied		450		A2s
		10 ms sine pulse, no voltage reapplied		630
Maximum I2√t for fusing	I2√t	t = 0.1 to 10 ms, no voltage reapplied		6300		A2√s
Maximum on-state voltage drop	VTM	16 A, TJ = 25 °C		1.25		V
On-state slope resistance	rt	TJ = 125 °C		12.0		mΩ
Threshold voltage	VT(TO)			1.0		V
Maximum reverse and direct leakage current	IRM/IDM	TJ = 25 °C	VR = Rated VRRM/VDRM	0.5		mA
		TJ = 125 °C		10
Holding current	IH	Anode supply = 6 V, resistive load, initial IT = 1 A		-	100
Maximum latching current	IL	Anode supply = 6 V, resistive load		200
Maximum rate of rise of off-state voltage	dV/dt			500		V/µs
Maximum rate of rise of turned-on current	dI/dt			150		A/µs

TRIGGERING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum peak gate power	PGM		8.0	W
Maximum average gate power	PG(AV)		2.0	W
Maximum peak positive gate current	+ IGM		1.5	A
Maximum peak negative gate voltage	- VGM		10	V
Maximum required DC gate current to trigger	IGT	Anode supply = 6 V, resistive load, TJ = - 10 °C	60	mA
		Anode supply = 6 V, resistive load, TJ = 25 °C	45
		Anode supply = 6 V, resistive load, TJ = 125 °C	20
Maximum required DC gate voltage to trigger	VGT	Anode supply = 6 V, resistive load, TJ = - 10 °C	2.5	V
		Anode supply = 6 V, resistive load, TJ = 25 °C	2.0
		Anode supply = 6 V, resistive load, TJ = 125 °C	1.0
Maximum DC gate voltage not to trigger	VGD	TJ = 125 °C, VDRM = Rated value	0.25
Maximum DC gate current not to trigger	IGD	TJ = 125 °C, VDRM = Rated value	2.0	mA

SWITCHING
PARAMETER	SYMBOL	TEST CONDITIONS	VALUES	UNITS
Typical turn-on time	tgt	TJ = 25 °C	0.9	µs
Typical reverse recovery time	trr	TJ = 125 °C	4
Typical turn-off time	tq	TJ = 125 °C	110

THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum junction and storage temperature range		TJ, TStg		- 40 to 125	°C
Maximum thermal resistance, junction to case		RthJC	DC operation	1.1	°C/W
Maximum thermal resistance, junction to ambient		RthJA		62
Typical thermal resistance, case to heatsink		RthCS	Mounting surface, smooth and greased	0.5
Approximate weight				2	g
				0.07	oz.
Mounting torque	minimum			6 (5)	kgf · cm (lbf · in)
	maximum			12 (10)
Marking device			Case style TO-220AB	25TTS08
				25TTS12