1300V 고속 스위칭 역전도 사이리스터 RCT
$3801-49 Piece/Pieces
$190≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
$3801-49 Piece/Pieces
$190≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-SHR400R22
상표: YZPST
VDRM / VRRM: 1300v
IDRM: 35ma
DV/dt: 1000 V/Sec
ITRMS: 630a
IT(AV): 400a
ITSM: 7200a
VTM: 3.0v
YZPST-SHR400R22 고속 스위칭 역전도 사이리스터
인버터 및 초퍼 애플리케이션을위한 RCT
풍모:
모든 확산 구조
맞물린 증폭 게이트 구성
최대 1300V의 차단 기능
최대 턴 오프 시간 보장
높은 dV / dt 기능
압력 조립 장치
차단-꺼짐 상태
Device Type |
VDRM |
VDSM |
SHR400R22 |
1300 |
1300 |
V DRM = 반복적 인 피크 오프 상태 전압
V D S M = 반복되지 않는 피크 오프 상태 전압
(비 반복 <5ms, T j = 0 ~ 115 ℃)
Repetitive peak off state leakage |
IDRM |
35 mA |
Critical rate of voltage rise |
dV/dt |
1000 V/msec |
지휘-상태
Parameter |
Symbol |
Min. |
Max. |
Typ |
Units |
Conditions |
RMS value of on-state current |
ITRMS |
|
630 |
|
A |
Nominal value |
Average on-state current |
IT(AV) |
|
400 |
|
A |
Continuous single-phase,half sine wave,180°conduction |
Peak one cycle surge on-state current(non repetitive) |
ITSM |
|
7200 |
|
A |
50Hz, sinusoidal wave- shape, 180o conduction, Tj = 115 oC |
I2t Limit Value |
I2t |
|
200x103 (On-Current) |
|
A2s |
|
31x103 (Reverse Current) |
||||||
Peak on-state voltage |
VTM |
|
3.0 |
|
V |
ITM =1250A; Tj = 25 oC |
Critical rate of rise of on-state current |
di/dt |
|
100 |
|
A/ms |
VD=1/2VDRM,ITM=800A f=60HZ IGM=1.5A,diG/dt=1.0A/us,Tj=115℃ |
Average reverse current |
IR(AV) |
|
150 |
|
A |
Continuous single-phase,half sine wave,180°conduction |
RMS reverse currrnt |
IR(RMS) |
|
235 |
|
A |
|
Peak reverse voltage |
VRM |
|
2.5 |
|
V |
IRM=500A, Tj = 25 oC |
Peak one cycle surge reverse current(non repetitive) |
IRSM |
|
2500 |
|
A |
50Hz, sinusoidal wave- shape, 180o conduction, Tj = 115 oC |
Critical rate of rise of commutating off-state voltage |
(dv/dt)C |
200 |
|
|
A/ms |
ITM=2000A,tw=60us,IRM=1000A, ,VDM=1/2VDRM,Pulse width 60ms ,Tj=115℃, |
게이팅
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
20 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
4 |
|
W |
|
Peak gate current |
IGM |
|
4 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
200
|
|
mA
|
VD = 6 V;RL = 6 ohms;TC = 25 oC |
Holding current |
IH |
|
500 |
|
|
Tj = 25 oC ;RL = 6 ohms |
Gate voltage required to trigger all units |
VGT |
|
3.0 |
|
V |
VD = 6 V;RL = 6 ohms;TC = 25oC |
Peak non- trigger voltage |
VGD |
|
0.15 |
|
V |
Tj = 115 oC;VD=1/2VDRM |
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