전력 변환기 용 2800V 고성능 사이리스터
$1551-199 Bag/Bags
$105≥200Bag/Bags
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1 Bag/Bags |
수송: | Ocean,Air |
포트: | SHANGHAI |
$1551-199 Bag/Bags
$105≥200Bag/Bags
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1 Bag/Bags |
수송: | Ocean,Air |
포트: | SHANGHAI |
모형: YZPST-5STP24L2800
상표: YZPST
고전력 사이리스터 위상 제어
YZPST-5STP24L2800
위상 제어 기능 및 애플리케이션을위한 고성능 사이리스터
풍모:
. 모든 확산 구조
. 디지털화 된 증폭 게이트 구성
. 최대 끄기 시간 보장
. 높은 dV / dt 기능
. 압력 조립 장치
실시 중-상태
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV)M |
|
2400 |
|
A |
Sinewave,180o conduction,T =85oC c |
RMS value of on-state current |
ITRMSM |
|
4120 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
46
43 |
|
kA
kA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, T = 125 j oC |
I square t |
I2t |
|
8.7x106 |
|
A2s |
8.3 msec |
Latching current |
IL |
|
200 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
75 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.35 |
|
V |
I = 3000 A; T = 125 oC TM j |
Threshold vlotage |
VT0 |
|
0.85 |
|
V |
|
Slope resistance |
rT |
|
0.16 |
|
mΩ |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
300 |
|
A/ s |
Switching from VDRM 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
150 |
|
A/ s |
Switching from VDRM 1000 V |
게이팅
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
- |
|
W |
|
Average gate power dissipation |
PG(AV) |
|
- |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
400 |
|
mA |
V = 10 V;I =3A;T = +25 oC D T j |
Gate voltage required to trigger all units |
VGT |
|
2.6 |
|
V |
V = 10 V;I =3A;T = +25 oC D T j |
Peak negative voltage |
VRGM |
|
- |
|
V |
|
동적
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
tgd |
|
3 |
- |
s |
VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C |
Turn-on time |
tgt |
|
- |
- |
|
|
Turn-off time (with VR = -5 V) |
tq |
- |
- |
400 |
s |
ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us |
Reverse recovery current |
Irm |
|
- |
|
A |
ITM=4000A, tp=2000us, di/dt=60A/us |
열 및 기계적 특성 및 등급
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+140 |
|
oC |
|
Thermal resistance - junction to case |
R (j-c) |
|
10 20 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistamce - case to sink |
R (c-s) |
|
2 4 |
|
K/kW |
Double sided cooled * Single sided cooled * |
Thermal resistance - junction to case |
R (j-s) |
|
- - |
|
K/kW |
Double sided cooled * Single sided cooled * |
Mounting force |
F |
45 |
60 |
50 |
kN |
|
Weight |
W |
|
|
0.9 |
Kg |
about |
개요
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