고전력 사이리스터 위상 제어
최신 가격을 얻으십시오지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | SHANGHAI |
모형: YZPST-KP738LT
상표: YZPST
고전력 사이리스터 위상 제어
PST-KP 738LT
풍모: . 모든 확산 구조 . 선형 증폭 게이트 구성 . 최대 22 00 볼트의 기능 차단
. 보장 된 최대 턴 오프 시간 . 높은 dV / dt 기능 . 압력 조립 장치
전도 - 온 상태
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
3200 |
|
A |
Sinewave,180o conduction,Ths=85oC |
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
45000
41500 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
8.5x106 |
|
A2s |
10.0 msec |
Latching current |
IL |
|
400 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
100 |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
1.30 |
|
V |
ITM = 2000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
150 |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ms |
Switching from VDRM£ 1000 V |
전기적 특성 및 정격
게이팅
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
Peak gate current |
IGM |
|
15 |
|
A |
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 4
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
동적
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
3.0 |
2.5 |
ms |
ITM = 50 A; VD = 1500 V Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
400
|
250 |
ms |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cpstcle ³ 0.01% |
Reverse recovery current |
Irr |
|
200 |
|
A |
ITM > 2000 A; di/dt = 10 A/ms; VR³ -50 V |
온도 및 기계적 특성 및 등급
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012
|
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002
|
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* 장착 표면이 부드럽고 납작하고 기름칠 됨
참고 : 케이스 개요 및 치수는이 기술 데이터의 3 페이지 케이스 외형 도면을 참조하십시오.
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