UPS 1700V IGBT 전원 모듈
$1952-99 Piece/Pieces
$135≥100Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | Shanghai |
$1952-99 Piece/Pieces
$135≥100Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-450B170E53
VCES: 1700V
IC: 450V
ICRM: 900A
VGES: ±20V
Ptot: 3260W
ICES: 1.0mA
IGBT 전원 모듈 YZPST-450B170E53
응용 프로그램
모터 드라이브를위한 인버터
AC 및 DC 서보 드라이브 앰프
UPS (무정전 전원 공급 장치)
fe atures
SPT+ IGBT 기술로 낮은 VCE (SAT)
양의 온도 계수를 가진 VCE (SAT)
빠른 및 소프트 복구 반 평행 FWD 포함
높은 단락 회로 기능 (10US)
낮은 인덕턴스 모듈 구조
최대 접합 온도 175c
절대 최대 등급
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25C |
1700 |
V |
Continuous Collector Current |
IC |
Tc=100C |
450 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
900 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25C |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25C Tvjmax=175C |
3260 |
W |
IGBT 특성
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =24mA,Tvj=25C | 5.4 | 6.2 | 7.4 | V |
Collector-Emitter Cut-off Current | ICES | VCE=1700V,VGE=0V, Tvj=25C | 1 | mA | ||
Ic=450A,VGE=15V, Tvj=25C | 2.4 | 2.75 | V | |||
Collector-Emitter | VCE(sat) | Ic=450A,VGE=15V, Tvj=125C | 2.8 | V | ||
Saturation Voltage | Ic=450A,VGE=15V, Tvj=150C | 2.9 | V | |||
Gate Charge | G | 2.7 | uC | |||
Input Capacitance | Cies | 30 | nF | |||
Output Capacitance | Coes | VCE=25V,VGE =0V, | 1.65 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25C | 1.08 | nF | ||
Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20 V, Tvj = 25C | 400 | nA | ||
Turn-on Delay Time | td(on) | 510 | ns | |||
Rise Time | tr | IC =450 A | 180 | ns | ||
Turn-off Delay Time | td(off) | VCE = 900 V | 620 | ns | ||
Fall Time | tf | VGE = ±15V | 185 | ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.3Ω | 126 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25C | 89 | mJ | ||
Turn-on Delay Time | td(on) | 512 | ns | |||
Rise Time | tr | IC =450 A | 190 | ns | ||
Turn-off Delay Time | td(off) | VCE = 900 V | 712 | ns | ||
Fall Time | tf | VGE = ±15V | 350 | ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.3Ω | 162 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125C | 125 | mJ |
Turn-on Delay Time |
td(on) |
IC =450 A VCE = 900 V VGE = ±15V RG = 3.3Ω Tvj=150C |
|
515 |
|
ns |
Rise Time |
tr |
|
200 |
|
ns |
|
Turn-off Delay Time |
td(off) |
|
730 |
|
ns |
|
Fall Time |
tf |
|
430 |
|
ns |
|
Energy Dissipation During Turn-on Time |
Eon |
|
175 |
|
mJ |
|
Energy Dissipation During Turn-off Time |
Eoff |
|
130 |
|
mJ |
|
SC Data
|
Isc
|
Tp≤10us,VGE=15V, Tvj=150C,Vcc=1000V, VCEM≤1700V |
|
1450
|
|
A
|
다이오드 특성
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100C | 450 | A | ||
Diode Peak Forward Current | IFRM | tp=1ms | 900 | A | ||
IF=450A,Tvj=25C | 1.85 | V | ||||
IF=450A,Tvj=125C | 1.92 | V | ||||
Forward Voltage | VF | IF=450A,Tvj=150C | 1.9 | V | ||
Recovered Charge | Qrr | IF =450 A | 110 | uC | ||
VR=900V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 348 | A | ||
Reverse Recovery Energy | Erec | Tvj=25C | 64.2 | mJ | ||
Recovered Charge | Qrr | IF =450 A | 160 | uC | ||
VR=900V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 394 | A | ||
Reverse Recovery Energy | Erec | Tvj=125C | 94.4 | mJ | ||
Recovered Charge | Qrr | IF =450 A | 176 | uC | ||
VR=900V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =2500A/us | 410 | A | ||
Reverse Recovery Energy | Erec | Tvj=150C | 103.2 | mJ |
회로도 _
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