TO-92 표준 1A TRIACS 범용 AC 스위칭 응용 프로그램에 적합합니다.
$0.033000-29999 Piece/Pieces
$0.02≥30000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$0.033000-29999 Piece/Pieces
$0.02≥30000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-Z0103MA
상표: yzpst
원산지: 중국
IT(RMS): 1A
I²t: 0.35A² s
DI/dt: 20A/µs
IGM: 1A
PG(AV): 1W
Tstg: - 40 to + 150℃
Tj: - 40 to + 125℃
기준 1A 트리 악 P/N : YZPST-Z0103MN0
Symbol | Parameter | Value | Unit | ||
On-state rms current | SOT-223 | T tab = 90 °C | |||
IT(RMS) | (full sine wave) | TO-92 | TL = 50 °C | 1 | A |
SMBflat-3L | T tab = 107 °C | ||||
ITSM | Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) | F = 50 Hz | t = 20 ms | 8 | A |
F = 60 Hz | t = 16.7 ms | 8.5 | |||
I²t | I²t Value for fusing | tp = 10 ms | 0.35 | ² | |
A s | |||||
dI/dt | Critical rate of rise of on-state current IG = 2 x I GT , tr ≤ 100 ns | F = 120 Hz | Tj = 125 °C | 20 | A/µs |
IGM | Peak gate current | tp = 20 µs | Tj = 125 °C | 1 | A |
PG(AV) | Average gate power dissipation | Tj = 125 °C | 1 | W | |
Tstg | Storage junction temperature range | - 40 to + 150 | °C | ||
Tj | Operating junction temperature range | - 40 to + 125 |
표 2. 전기 형질 ( T J. = 25 ° C, ~하지 않는 한 그렇지 않으면 지정 )
Symbol | Z01 | |||||||
Test conditions | Quadrant | 3 | 7 | 9 | 10 | Unit | ||
I GT (1) | VD = 12 V, | I - II - III | MAX. | 3 | 5 | 10 | 25 | mA |
RL = 30 Ω | IV | 5 | 7 | 10 | 25 | |||
VGT | ALL | MAX. | 1.3 | V | ||||
VD = VDRM, | ||||||||
VGD | RL = 3.3 kΩ, | ALL | MIN. | 0.2 | V | |||
Tj = 125 °C | ||||||||
IH (2) | IT = 50 mA | MAX. | 7 | 10 | 10 | 25 | mA | |
IL | IG = 1.2 I GT | I - III - IV | MAX. | 7 | 10 | 15 | 25 | mA |
II | 15 | 20 | 25 | 50 | ||||
dV/dt (2) | VD = 67% V DRM gate open Tj = 110 °C | MIN. | 10 | 20 | 50 | 100 | V/µs | |
(dV/dt)c | (dI/dt)c = 0.44 A/ms, | MIN. | 0.5 | 1 | 2 | 5 | V/µs | |
-2 | Tj = 110 °C |
1. 최저한의 나 GT ~이다 보장 5 시에 % ~의 나는 gt 맥스 .
2. 두 극성을 위해 A2의 참조 에게 A1.
표 3. 정적 특성
Symbol | Test conditions | Value | Unit | ||
VTM(1) | ITM = 1.4 A, tp = 380 µs | Tj = 25 °C | MAX. | 1.6 | V |
V to (1) | Threshold voltage | Tj = 125 °C | MAX. | 0.95 | V |
Rd (1) | Dynamic resistance | Tj = 125 °C | MAX. | 400 | mΩ |
I DRM | V DRM = VRRM | Tj = 25 °C | MAX. | 5 | µA |
IRRM | Tj = 125 °C | 0.5 | mA |
1. 두 극성을 위해 A2의 참조 에게 A1.
표 4. 열 저항 ES
Symbol | Parameter | Value | Unit | |||
Rth(j-t) | Junction to tab (AC) | SOT-223 | 25 | |||
Rth(j-t) | Junction to tab (AC) | SMBflat-3L | 14 | |||
Rth(j-I) | Junction to lead (AC) | TO-92 | 60 | |||
S(1) = 5 cm² | SOT-223 | MAX. | 60 | °C/W | ||
Rth(j-a) | Junction to ambient | SMBflat-3L | 75 | |||
TO-92 | 150 |
1. s = 구리 표면 아래에 탭 .
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