높은 서지 기능 400A TG-C 패키지 TRIAC TG25C60
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-BTA25-600BW TG25C60
원산지: 중국
IT RMS: 25A
ITSM: 300/330A
I2t: 450A2S
PGM: 10W
PGAV: 1W
IGM: 3A
VGM: 10V
Di/dt: 50A/μS
yzpst-tg25..series
YZPST-BTA25-600BW TG25C60
트라이크 (외딴 유형)
TG25C/E/D는 복사기, 마이크로파 오븐, 고체 스위치와 같은 광범위한 응용 분리에 적합한 분리 된 성형 트라이 악입니다.
모터 제어, 조명 제어 및 히터 제어.
그것은 av 25a
높은 서지 기능 400A
분리 된 명사 AC2500V
탭 터미널
최고 등급
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT RMS |
R.M.S. On-State Current |
Tc |
25 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
300/330 |
A |
I2t |
I2t |
Value for one cycle of surge current |
450 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PGAV |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS |
50 |
A/μS |
Tj |
Operating Junction Temperature |
|
-25~+125 |
℃ |
Tstg |
Storage Temperature |
|
-40~+125 |
℃ |
VISO |
Isolation Breakdown Voltage R.M.S. |
A.C. 1 minute |
2500 |
V |
|
Mounting Torque M4 |
Recommended Value 1.0 ~1.4(10~14) |
14 |
kgf.CM |
TJ = 25 ~하지 않는 한 그렇지 않으면 지정되었습니다
Symbol | Item | Ratings | Unit | |||
TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.4 |
V |
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT3 + |
3 |
|
- |
mA |
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT3+ |
3 |
|
- |
V |
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD= 1/2VRRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
20 |
V/μS |
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
IH |
Holding Current, typ. |
Tj =25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
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