높은 신뢰성 1200V SKKT57B-16E 사이리스터 모듈

VDRM

VRRM

VRSM

1200V

1200V

1300V

Symbol

Conditions

Values

Units

IT(AV)

IF(AV)

IRMS

sin. 180; TC=85°C

50

130/3×100

A

ITSM

I2t

Tvj=25°C; 10ms

Tvj=25°C; 8.3…10ms

1500

11

A

KA2s

VT

IDD

IRD

Tvj=25°C; IT=200A

Tvj=125°C; VRD=VRRM ; VDD=VDRM

max. 1.65

max. 15

V

mA

tgd

tgr

Tvj=25°C; IG=1A; diG/dt=1A/μs; VD=2/3VDRM

1

2

μs

(di/dt)cr

(dv/dt)cr

tq

IH

IL

Tvj=125°C

Tvj=125°C

Tvj=125°C

Tvj=25°C; typ. /max.

Tvj=25°C; RG=33Ω; typ. /max.

max. 150

max. 1000

80

150/250

300/600

A/μs

V/μs

μs

mA

mA

VGT

IGT

VGD

IGD

Tvj=25°C; d.c.

Tvj=25°C; d.c.

Tvj=125°C; d.c.

Tvj=125°C; d.c.

min. 3

min. 150

max. 0.25

max. 6

V

mA

V

mA

Rth(j-c)

Rth(c-s)

Tvj

Tstg

per thyristor /per module

per thyristor /per module

0.57/0.29

0.2/0.1

-40…+125

-40…+125

K/W

K/W

°C

°C

Visol

a.c. 50Hz; r.m.s.; 1s/1min.

3600/3000

V