$4.5100-999 Piece/Pieces
$3.5≥1000Piece/Pieces
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모형: YZPST-D100H065AT1S3
원산지: 중국
VCES: 650V
VGES: ±20V
VCEsat, Tvj=25: 1.75V
IC(TC=100℃ ): 100A
ICM: 200A
Tvjmax: 175 ℃
Package: TO247-3L
IC(TC=25℃): 125A
| 판매 단위 | : | Piece/Pieces |
| 포장 종류 | : | 1. 안티 전자 포장 2. 상지 박스 3. 브레이드 |
| 다운로드 | : |
|
도랑 필드 스톱 기술 IGBT
YZPST-D100H065AT1S3
특징
650V, 100A
vce (sat) (typ.) =1.75v@vge=15v, ic = 100a
최대 접합 온도 175 
PB 프리 리드 도금; ROHS 준수
응용 프로그램
태양 변환기
중단되지 않은 전원 공급 장치
용접 변환기
중간에서 고급 스위치 주파수 변환기
열쇠 성능과 P ACKAGE 매개 변수
|
Order codes |
VCE |
IC |
VCEsat, Tvj=25 |
Tvjmax |
Marking |
Package |
|
D100H065AT1S3 |
650V |
100A |
1.75V |
175 ℃ |
D100H65AT1 |
TO247-3L |
절대 최대 값 등급
| Symbol | Parameter | Value | Unit |
| VCES | Collector-Emitter Voltage | 650 | V |
| VGES | Gate-Emitter Voltage | ±20 | V |
| IC | Continuous Collector Current (TC=25 ℃ ) | 125 | A |
| Continuous Collector Current (TC=100 ℃ ) | 100 | A | |
| ICM | Pulsed Collector Current (Note 1) | 200 | A |
| Diode Forward Current (TC=25 ℃ ) | 125 | A | |
| IF | Diode Forward Current (TC=100 ℃ ) | 100 | A |
| Maximum Power Dissipation (TC=25 ℃ ) | 385 | W | |
| PD | Maximum Power Dissipation (TC=100 ℃ ) | 192 | W |
| TJ | Operating Junction Temperature Range | -40 to 175 | ℃ |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
전기 같은 형질 (TC = 25
달리 명시되지 않는 한.)
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVCES | Collector-Emitter | VGE=0V, IC=200uA | 650 | V | ||
| Breakdown Voltage | --- | --- | ||||
| ICES | Collector-Emitter Leakage Current | VCE=650V, VGE=0V | 1 | mA | ||
| --- | --- | |||||
| Gate Leakage Current, Forward | VGE=20V, VCE=0V | 600 | nA | |||
| --- | --- | |||||
| IGES | Gate Leakage Current, Reverse | VGE=-20V, VCE=0V | 600 | nA | ||
| --- | --- | |||||
| VGE(th) | Gate Threshold Voltage | VGE=VCE , IC=750uA | 4.2 | --- | 6 | V |
| VCE(sat) | Collector-Emitter | VGE=15V, IC=100A, Tj=25 ℃ | --- | 1.75 | 2.2 | V |
| Saturation Voltage | VGE=15V, IC=100A, Tj=125 ℃ | --- | 2.05 | --- | V | |
| td(on) | Turn-on Delay Time | --- | 35 | --- | ns | |
| tr | Turn-on Rise Time | VCC=400V | --- | 155 | --- | ns |
| td(off) | Turn-off Delay Time | VGE=±15V | --- | 188 | --- | ns |
| tf | Turn-off Fall Time | IC=100A | --- | 69 | --- | ns |
| Eon | Turn-on Switching Loss | RG=8 | --- | 4.35 | --- | mJ |
| Eoff | Turn-off Switching Loss | Inductive Load | --- | 1.11 | --- | mJ |
| Ets | Total Switching Loss | TC=25 ℃ | --- | 5.46 | --- | mJ |
| Cies | Input Capacitance | VCE=25V | --- | 7435 | --- | pF |
| Coes | Output Capacitance | VGE=0V | --- | 237 | --- | pF |
| Cres | Reverse Transfer | f =1MHz | 128 | pF | ||
| Capacitance | --- | --- |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| IF=100A, Tj=25 ℃ | --- | 1.65 | 2.2 | V | ||
| VF | Diode Forward Voltage | IF=100A, Tj=150 ℃ | --- | 1.4 | --- | V |
| trr | Diode Reverse Recovery Time | 201 | ns | |||
| VR=400V | --- | --- | ||||
| IF=100A | ||||||
| Irr | Diode peak Reverse | dIF/dt=200A/us | 19 | A | ||
| Recovery Current | TC=25 ℃ | --- | --- | |||
| Qrr | Diode Reverse Recovery Charge | 2.45 | uC | |||
| --- | --- |
노트 1
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