빠른 트렌치/필드 스톱 IGBT 및 빠른 복구 다이오드가있는 62mm 모듈
$4550-499 Piece/Pieces
$38≥500Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CIF,CFR |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$4550-499 Piece/Pieces
$38≥500Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CIF,CFR |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-P150HFN120AT1R6
상표: yzpst
원산지: 중국
VcEs: 1200V
VGEs: ±20V
Lc: 150A
CRM: 300A
Ptot: 1500W
VcE(sat: 2.2V
VgE(th: 2.5V
P/N : YZPST-P150HFN120AT1R6
빠른 트렌치/필드 스톱이있는 62mm 모듈 IGBT 및 빠른 회복 다이오드
특징
■ 낮은 스위칭 손실
■ 낮은 vcesal
■ 낮은 VCE (양의 온도 계수가있는 앉았습니다
응용 프로그램
■ 모터 드라이브
UPS 시스템
■ 고전력 인버터
동등한 회로 회로도
IGBT -변호사
최대 등급 값
Symbol |
Description |
Conditions |
Values |
Unit |
VcEs |
Collector-Emitter Voltage |
Tv=25℃ |
1200 |
V |
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
lc |
Continuous DC Collector Current |
Tc=100℃ |
150 |
A |
CRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Ptot |
Total Power Dissipation |
Tc=25℃,Tyjmax=175℃ |
1500 |
W |
Symbol | Values | |||||
Description | Conditions | Min. | Typ. | Max. | Unit | |
VcE(sat | Collector-Emitter Saturation Voltage | VcE=15V,Ic=150A,Tv=25℃ | 2.2 | V | ||
Vge=15V,Ic=150A,Tv=125℃ | 2.5 | V | ||||
VgE(th | Gate Threshold Voltage | VgE=VcE,Ic=3.8mA | 5 | 5.8 | 6.5 | V |
IcEs | Collector-Emitter Cut-Off Current | VcE=1200V,VgE=0V | mA | |||
GES | Gate-Emitter Leakage Current | VcE=20V,VcE=0V | 600 | nA | ||
RGint | Internal Gate Resistor | Ty=25℃ | 3.8 | Ω | ||
Cies | Input Capacitance | 11.5 | nF | |||
Coes | Output Capacitance | Vce=25V,Vce=0V,f=1MHz | 1 | nF | ||
Cres | Reverse Transfer Capacitance | 0.4 | nF | |||
tt(on) | Turn-on Delay Time | 139 | ns | |||
Vcc=600V | ||||||
t | Turn-on Rise Time | VoE=±15V | 37 | nS | ||
d(a) | Turn-off Delay Time | Ic=150A | 192 | nS | ||
t | Turn-off Fall Time | Rg=2.0g | 128 | nS | ||
Eon | Turn-on Switching Loss | Inductive Load | 7.9 | -= | mJ | |
E₀ff | Turn-off Switching Loss | Ty=25℃ | 8.4 | mJ | ||
Isc | Short Circuit Data | VcE≤15V,Vcc=600V | 518 | A | ||
tp≤10μs,Tv=25℃ | ||||||
Thermal Resistance,Junction to Case | Per IGBT | —-- | 0.1 | —-- | K/W | |
Twop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ |
다이오드 -변호사
최고 정격 값
Symbol |
Description |
Conditions |
Values |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
Tv=25℃ |
1200 |
V |
lF |
Continuous DC Forward Current |
|
150 |
A |
lFRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
특징적인 값
Symbol | Values | |||||
Description | Conditions | Min. | Typ | Max. | Unit | |
Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ |
패키지 개요 (MM)
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