낮은 VCE SAT 트렌치 IGBT 기술 450A IGBT 모듈 1700V
$1605-49 Piece/Pieces
$120≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$1605-49 Piece/Pieces
$120≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-GD450HFX170C6S
상표: yzpst
원산지: 중국
VCES: 1700V
VGES: ±20V
ICM: 900A
PD: 2542W
VRRM: 1700V
IF: 450A
IFM: 900A
IGBT 모듈
IGBT 전원 모듈은 울트라를 제공합니다
낮은 전도 손실 및 단락 견고성.
그들은 다음과 같은 응용 프로그램을 위해 설계되었습니다
일반 인버터 및 업.
특징
낮은 VCE (SAT) 트렌치 IGBT 기술
10μs 단락 회로 기능
양의 온도 계수를 갖는 VCE (SAT)
최대 접합 온도 175oC
낮은 인덕턴스 케이스
빠른 및 소프트 리버스 복구 안티 평면 FWD
DBC 기술을 사용한 고립 된 구리베이스 플레이트
전형적인 응용 프로그램
모터 드라이브를위한 인버터
AC 및 DC 서보 드라이브 앰프
무정전 전원 공급 장치
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC=25oC @ TC= 100oC |
706 450 |
A |
ICM |
Pulsed Collector Current tp=1ms |
900 |
A |
PD |
Maximum Power Dissipation @ T =175oC |
2542 |
W |
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
450 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
900 |
A |
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
IC=450A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
VCE(sat) | Collector to Emitter | IC=450A,VGE=15V, Tj=125oC | 2.25 | V | ||
Saturation Voltage | IC=450A,VGE=15V, Tj=150oC | 2.35 | ||||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 18.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
Current | Tj=25oC | |||||
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
RGint | Internal Gate Resistance | 1.67 | Ω | |||
Cies | Input Capacitance | VCE=25V,f=1MHz, | 54.2 | nF | ||
Cres | Reverse Transfer | VGE=0V | 1.32 | nF | ||
Capacitance | ||||||
QG | Gate Charge | VGE=- 15…+15V | 4.24 | μC | ||
td(on) | Turn-On Delay Time | 179 | ns | |||
tr | Rise Time | 105 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj=25oC | 680 | ns | ||
tf | Fall Time | 375 | ns | |||
Eon | Turn-On Switching | 116 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 113 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 208 | ns | |||
tr | Rise Time | 120 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 125oC | 784 | ns | ||
tf | Fall Time | 613 | ns | |||
Eon | Turn-On Switching | 152 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 171 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 208 | ns | |||
tr | Rise Time | 120 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=450A, RG=3.3Ω,VGE=±15V, Tj= 150oC | 800 | ns | ||
tf | Fall Time | 720 | ns | |||
Eon | Turn-On Switching | 167 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 179 | mJ | |||
Loss | ||||||
tP≤10μs,VGE=15V, | ||||||
ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 1800 | A |
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
Diode Forward | IF=450A,VGE=0V,Tj=25oC | 1.8 | 2.25 | |||
VF | Voltage | IF=450A,VGE=0V,Tj= 125oC | 1.95 | V | ||
IF=450A,VGE=0V,Tj= 150oC | 1.9 | |||||
Qr | Recovered Charge | VR=900V,IF=450A, | 105 | μC | ||
IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj=25oC | 198 | A | ||
Recovery Current | ||||||
Erec | Reverse Recovery Energy | 69 | mJ | |||
Qr | Recovered Charge | VR=900V,IF=450A, | 187 | μC | ||
IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 125oC | 578 | A | ||
Recovery Current | ||||||
Erec | Reverse Recovery Energy | 129 | mJ | |||
Qr | Recovered Charge | VR=900V,IF=450A, | 209 | μC | ||
IRM | Peak Reverse | -di/dt=4580A/μs,VGE=- 15V Tj= 150oC | 585 | A | ||
Recovery Current | ||||||
Erec | Reverse Recovery Energy | 150 | mJ |
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