TO-220 8A BTA208S 800V TRIAC DV/DT에서 우수한 성능 및 신뢰성
$0.09-0.1 /Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 6000 Piece/Pieces |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
$0.09-0.1 /Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 6000 Piece/Pieces |
수송: | Ocean,Land,Express,Others |
포트: | SHANGHAI |
모형: YZPST-BTA208S-800B
상표: yzpst
Place Of Origin: China
IT(RMS): 8A
VDRM/VRRM: 600/800V
IGT: ≤10mA
ITSM T=20ms: 65A
ITSM T= 16.7ms: 71A
I2t: 21A2S
Di/dt: 100A/μs
BTA208 트리 악
YZPST-BTA208S-800B
제외 :주요 특징
Symbol | Value | Unit |
IT(RMS) | 8 | A |
VDRM/VRRM | 600/800 | V |
IGT | ≤10 | mA |
절대 최대 I Mum 등급
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤102℃ | 8 | A |
Non repetitive surge peak on-state current | t=20ms | 65 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 71 | A |
I2t | I2t Value for fusing | t= 10ms | 21 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 12 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
전기적 특성 (달리 명시되지 않는 한 TJ = 25。C)
정적 특성
Symbol | Value | ||||||
Parameter | Test Condition | Quadrant | MIN | TYPE | MAX | Unit | |
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT= 10A | - | 1.3 | 1.65 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 60 | mA |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
동적 특성
Symbol | Value | ||||
Parameter | Test Condition | MIN | TYPE | Unit | |
dVD/dt | Critical rate of rise of off- state voltage | VDM = 67% VDRM(max); Tj = 125 ˚C | 1000 | 4000 | V/us |
exponential waveform; gate open circuit | |||||
dIcom/dt | Critical rate of change of commutating current | VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without snubber; gate open circuit | 14 | A/ms | |
T | Gate controlled turn-on time | ITM = 12 A; VD = VDRM(max) ; IG = 0. 1 A; dIG/dt = 5 A/µs | 2 | us | |
tgt |
패키지 기계적 데이터
TO-220
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.