저전압 용 150A 트리플 암 사이리스터 모듈

V_DRM/V_RRM

T_j=125°C

400

V

V_RSM

T_j=125°C

500

V

Symbol

Condition

Ratings

Unit

I_T(AV)

sin. 180; T_c =85°C,

150

A

I_TRMS

sin. 180; T_c =85°C,

230

A

I_TSM

T_vj =25°C; 10 ms

3230

A

I²t

T_vj =25°C;  8,3-10 ms

360

kA²S

(di/dt)_cr

non-repetitive

100

A/us

V_iso

A.C. 1s / 1min.

3600/3000

V

T_j

-40 ~ + 125

°C

T_stg

-40 ~ + 125

°C

M

mounting torque M6

2-3

N.m

W

About

-

g

Symbol

Condition

Ratings

Unit

I_DRM /I_RRM

AtV_DRM, T_j=125°C

40

mA

V_T

On-State Current 450A, T_j=25°C

1.2

V

V_T(TO)

T_j=125°C

-

V

t_gd

T_j=25°C

-

us

t_q

T_j=125°C

-

us

I_GT/V_GT

T_j=25°C

100 / 3

mA/V

V_GD

T_j=125°C

0.25

V

(dv/dt)_cr

T_j=125°C

200

V/us

I_H

T_j=25°C, typ. / max.

-

mA

I_L

T_j=25°C, typ. / max.

-

mA

R_th(j-c)

1/3 Module

0.15

°C/W

R_th(c-s)

1/3 Module

0.15

°C/W