$3910-99 Piece/Pieces
$31≥100Piece/Pieces
| 지불 유형: | L/C,T/T,Paypal |
| 인 코텀: | FOB,CFR,CIF |
| 수송: | Ocean,Land,Express,Others |
| 포트: | SHANGHAI |
모형: YZPST-M1A045170L
상표: yzpst
원산지: 중국
VDSmax: 1700V
VGSmax: -10/+25V
VGSop: -5/+20V
ID(pluse): 160A
PD: 520W
TJ , Tstg: -55 to 175℃
TL: 260℃
| 판매 단위 | : | Piece/Pieces |
| 포장 종류 | : | 1. 안티 전자 포장 2. 상지 박스 3. 브레이드 |
| 다운로드 | : |
|
|
Part Number |
Package |
Marking |
|
M1A045170L |
TO-247-4L |
M1A045170L |
최고 등급 (달리 명시되지 않는 한 TC = 25 ° C)
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
| VDSmax | Drain-Source Voltage | 1700 | V | VGS = 0 V, ID = 100 μA | |
| VGSmax | Gate-Source Voltage | -0.4 | V | Absolute maximum values | |
| VGSop | Gate-Source Voltage | -0.25 | V | Recommended operational values | |
| ID | Continuous Drain Current | 85 | A | VGS = 20 V, TC = 25˚C | |
| 55 | VGS = 20 V, TC = 100˚C | ||||
| ID(pluse) | Pulsed Drain Current | 160 | A | Pulse width tP limited by Tjmax | |
| PD | Power Dissipation | 520 | W | TC =25˚C, TJ =150℃ | |
| TJ , Tstg | Operating Junction and Storage Temperature | -55 to 175 | ℃ | ||
| TL | Solder Temperature | 260 | ℃ | 1.6mm (0.063 ”) from case for 10s | |
| Md | Mounting Torque | 1 | Nn | M3 or 6-32 screw | |
| 8.8 | lbf-in |
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note | |
| V(BR)DSS | Drain Drain-Source | 1700 | - | V | VGS = 0 V, ID = 100 μA | |||
| Breakdown Voltage | ||||||||
| 2 | 2.6 | 4 | V | VDS = VGS, ID = 18mA | ||||
| VGS(th) | Gate threshold Voltage | 1.9 | V | VDS = VGS, ID = 18mA, TJ =150°C | ||||
| IDSS | Zero Gate Voltage Drain Current | 2 | 100 | μA | VDS = 1700 V, VGS = 0 V | |||
| IGSS | Gate Source Leakage | 2 | uA | VGS = 20 V, VDS = 0 V | ||||
| Current | ||||||||
| Drain-Source | 34 | 60 | mΩ | VGS = 20 V, ID = 50 A | ||||
| RDSON | On-State Resistance | 66 | VGS = 20 V, ID = 50A, TJ =150°C | |||||
| gfs | Transconductance | 16 | VGS = 20 V, ID = 50A | |||||
| 19 | S | VGS = 20 V, ID = 50A, TJ =150°C | ||||||
| C | Input Capacitance | 4078 | ||||||
| oss | Output Capacitance | 167 | ||||||
| rss | Reverse Capacitance | 39 | pF | VDS =1000V,TJ=25°C,f=1MHz | ||||
| Eoss | Coss Stored Energy | 203 | μJ | |||||
| Eon | Turn on Switching Energy | 1.9 | VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext) = 2.5Ω, | |||||
| Eoff | Turn off Switching Energy | 0.3 | mJ | TJ=150°C | ||||
| tdon | Turn on delay time | 21 | ||||||
| tr | Rise time | 46 | VDS = 1200 V, VGS = -5/20 V, ID = 50A, Rg(ext)= 2.5Ω | |||||
| tdoff | Turn off delay time | 50 | ||||||
| tf | Fall time | 19 | ns | |||||
| Rgint | Internal Gate Resistance | 2.6 | VAC =25mV, f=1MHz | |||||
| Qgs | Gate to Source Charge | 44 | VDS = 1200 V, VGS = -5/20 V, ID = 50A | |||||
| Qgd | Gate to Drain Charge | 84 | ||||||
| Qg | Total Gate Charge | 248 | nC |
전기 특성 S (TC = 25 ° C가 아닌 그렇지 않으면 지정)
| Symbol | Parameter | Min. | Typ. | Max. | Unit | Test Conditions | Note |
| VSD | Diode Forward Voltage | 6.1 | - | V | VGS = -5 V, ISD = 25 A | ||
| 5.2 | VGS = -5 V, ISD = 25 A,TJ =150°C | ||||||
| I | Continuous Diode Forward Current | 75 | A | VGS = -5V, Tc=25°C | |||
| S | |||||||
| trr | Reverse Recovery Time | 126 | ns | VR= 1200 V, VGS = -5V, ID = 50A, di/dt=1400A/μS,, TJ =150°C | |||
| Qrr | Reverse Recovery Charge | 1360 | nC | ||||
| Irrm | Peak Reverse Recovery Current | 19 | A |
전화 번호: 86-514-87782298
Whatsapp: +8613805278321
회사 주소: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
웹 사이트: https://kr.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now