높은 DV/DT 속도 to-126 600V 2P4M 2A SCR
$0.11000-9999 Piece/Pieces
$0.07≥10000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Express,Others |
포트: | SHANGHAI |
$0.11000-9999 Piece/Pieces
$0.07≥10000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Express,Others |
포트: | SHANGHAI |
모형: YZPST-2P4M 10-30UA
상표: yzpst
원산지: 중국
IT(RMS): 2.0A
IGT: ≤200μA
VDRM: 600V
VRRM: 600V
Tstg: -40~150℃
Tj: -40~110℃
ITSM: 20A
2p4m 2 a 예민한 SCRS
기본 특징:
symbol |
value |
unit |
IT(RMS) |
2.0 |
A |
IGT |
≤200 |
μA |
VDRM/VRRM |
600 |
V |
순수한 최고 등급 :
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~110 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600 |
V |
RMS on-state current |
IT(RMS) |
2 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
20 |
A |
I2t value for fusing (tp=10ms) |
I2t |
2 |
A2s |
Critical rate of rise of on-state current (IG=2 × IGT) |
dI/dt |
50 |
A/ μs |
Peak gate current |
IGM |
0.2 |
A |
Average gate power dissipation |
PG(AV) |
0.1 |
W |
Peak gate power |
PGM |
0.5 |
W |
전기적 특성 (달리 명시되지 않는 한 tj = 25 25)
Symbol | Value | ||||
Test Condition | MIN | TYPE | MAX | Unit | |
IGT | VD=12V, RL=33Ω | - | 50 | 200 | μA |
VGT | - | 0.6 | 0.8 | V | |
VGD | VD=VDRM Tj=110℃ | 0.2 | - | - | V |
IH | IT=50mA | - | - | 5 | mA |
IL | IG=1.2IGT | - | - | 6 | mA |
dV/dt | VD=2/3×VDRM Tj=110℃ RGK=1KΩ | 20 | - | - | V/ µs |
정적 특성
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=4A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
IDRM | VD=VDRM= VRRM RGK=1KΩ | Tj=25℃ | MAX | 5 | µA |
IRRM | Tj=110℃ | 0.1 | mA |
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.