트라이 액 bt134 scr bt134 트라이 액 사이리스터
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인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | SHANGHAI |
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | SHANGHAI |
모형: YZPST-BT134
상표: YZPST
트라이 악
YZPST- B T134
● 패키지
TO-220P
Symbol |
Value |
Unit |
IT(RMS) |
2 |
A |
VDRM / VRRM |
≥600 |
V |
IGT 4 |
6-10 |
mA |
● 절대 등급 (제한값)
Symbol |
Parameter |
Value |
Unit |
|
IT(RMS) |
Rms on-state current(full sine wave) |
2 |
A |
|
ITSM |
Non- repetitive Peak on-stateCurrent (Tj=25℃,tp=20ms) |
25 |
A |
|
I2t |
I2t for fusing(tp=10ms) |
2.6 |
A2S |
|
IGM |
Peak gate current |
2 |
A |
|
VGM |
Peak gate voltage |
5 |
V |
|
PGM |
Peak gate power |
5 |
W |
|
PG(AV) |
Average gate power |
0.5 |
W |
|
dIT/dt |
Repetitive rate of rise of on-state current after triggering(IT=6A,IG=0.2A,dlG/dt=0.2A/us) |
Ⅰ-Ⅱ-Ⅲ |
50 |
A/μs |
Ⅳ |
10 |
|||
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+110 |
℃ |
● 열 저항
Symbol |
Parameter |
Value |
Unit |
Rth (j-c) |
Thermal Resistance,Junction to case |
3.0 |
℃/W |
Rth (j-a) |
Thermal Resisatance,Junction to ambient |
60 |
℃/W |
● 전기적 특성 ( 별도의 언급이없는 한 Tj = 25 ℃ )
Symbol |
Test Conditions |
Quadrant |
|
Value |
Unit |
|
IGT |
VD=12V, RL=30Ω, IT=0.1A |
Ⅰ-Ⅱ-Ⅲ |
max |
8 |
mA |
|
Ⅳ |
min |
6 |
||||
|
|
max |
10 |
|||
VGT |
VD=12V, RL=30Ω |
ALL |
max |
1.5 |
V |
|
VGD |
VD=VDRM, RL=3.3KΩ Tj=110℃ |
ALL |
min |
0.2 |
V |
|
IH |
VD=12V, IT=0.1A |
ALL |
max |
10 |
mA |
|
Il |
VD=12V ,IG=1.21GT |
Ⅰ-Ⅲ |
max |
10 |
mA |
|
Ⅱ-Ⅳ |
15 |
|||||
dV/dt |
VD=67%VDRM, GateOpen,Tj=110℃ |
|
min |
10 |
v/μs |
|
VTM |
IT=5A,tp=380μs |
ALL |
max |
1.7 |
V |
|
IDRM IRRM |
VD=VDRM VR=VRRM |
Tj=25℃ |
|
max |
0.01 |
mA |
Tj=125℃ |
0.2 |
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