YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
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30V 전자 담배 라이터 Mosfet 80N03
30V 전자 담배 라이터 Mosfet 80N03
30V 전자 담배 라이터 Mosfet 80N03
30V 전자 담배 라이터 Mosfet 80N03

30V 전자 담배 라이터 Mosfet 80N03

$0.23≥1000Piece/Pieces

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수송:Ocean,Air
포트:Shanghai
제품 속성

모형YZPST-80N03

상표YZPST

포장 및 배송
판매 단위 : Piece/Pieces
포장 종류 : 1. 정전기 방지 포장 2. 판지 상자 3. 플라스틱 보호 포장
제품 설명

전자 시가 라이터 Mosfet

YZPST-80N03


VDSS 30V

RDS(ON) 4mΩ(max.)@ VGS=10V

RDS(ON) 6mΩ(max.)@ VGS=4.5V

ID 100A

 

 

 

 

 

 

Description

DFN5X6-8L

YZPST 80N03 uses advanced Trench technology and designs to provide excellent RDS(ONwith low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

 

Applications

Features

Lithium-Ion Secondary Batteries

Load Switch

DC-DC converters and Off-line UPS

Low On-Resistance

Low Input Capacitance

Low Miller Charge

Low Input / Output Leakage


  Absolute Maximum Ratings (TA=25°C unless otherwise noted)                                                         

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30V

V

Gate-Source Voltage

VGSS

±20V

V

Drain Current-Continuous @ TC=25 NOTE1, 6

 

ID

100

A

Drain Current-Continuous @ TC=100 NOTE1, 6

80

A

Drain Current-Continuous @ TA=25 NOTE1

 

ID

20

A

Drain Current-Continuous @ TA=100 NOTE1

15

A

Drain Current-Pulsed NOTE 2

IDM

216

A

Avalanche Current

IAS

53.8

A

Avalanche Energy NOTE 3

EAS

144.7

mJ

Maximum Power Dissipation @ TC=25 NOTE4

 

PD

69

W

Maximum Power Dissipation @ TA=25 NOTE4

2

W

Storage Temperature Range

TSTG

-55 to 150°C

°C

Operating Junction Temperature Range

TJ

-55 to 150°C

°C

  Thermal Resistance Ratings                                                                                                                    

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Maximum Junction-to-Ambient NOTE1

RθJA

Steady State

-

-

62

°C/W

Maximum Junction-to-Case NOTE1

RθJC

Steady State

-

-

1.8

°C/W

  Electrical Characteristics(TJ=25°C unless otherwise noted)                                                              

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V , IDS=250uA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=24V, VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=±20V , VDS=0V

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS=VDS, IDS=250uA

1.2

-

2.5

V

 

Drain-Source On-Resistance NOTE2

 

RDS(ON)

VGS=10V , IDS=30A

-

-

4

mΩ

VGS=4.5V , IDS=20A

-

-

6

mΩ

Forward Transconductance

gfs

VDS=5V , ID=30A

-

26.5

-

S

Gate Resistance

Rg

VDS=0V , VGS=0V , f=1MHz

-

1.4

-

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

 

 

VDS=15V, VGS=0V, f=1MHz

-

3080

-

 

 

pF

Output Capacitance

Coss

-

410

-

Reverse Transfer Capacitance

Crss

-

316

-

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Td(on)

 

 

VDS=15V, VGS=10V, ID=15A , RGEM=3.3Ω

-

9.6

-

 

ns

Rise Time

tr

-

20.8

-

Turn-Off Delay Time

Td(off)

-

58

-

Fall Time

tf

-

16

-

Total Gate Charge at 4.5V

Qg

 

 

VDS=15V, IDS=15A, VGS=4.5V

-

32

-

 

 

nC

Gate to Source Gate Charge

Qgs

-

9.1

-

Gate to Drain "Miller" Charge

Qgd

-

12.2

-

SWITCHING CHARACTERISTICS

Drain-Source Diode Forward Voltage 2

VSD

VGS=0V, IS=1A

-

-

1.0

V

Continuous Source Current NOTE1, 5

IS

 

VG=VD=0V , Force Current

-

-

100

A

Pulsed Source Current NOTE2,5

ISM

-

-

216

A

노트:

1. 2 인치 구리선이있는 1 인치 2 FR-4 보드에 표면 실장하여 테스트 한 데이터.

2. 펄스, 펄스 폭 ≦ 300us, 듀티 사이클 ≦ 2 %

3. EAS 데이터는 Max. 평가. 테스트 조건은 VDD = 25V, VGS = 10V, L = 0.1mH, IAS = 53.8A

4. 전력 소비는 175 ℃ 접합 온도에 의해 제한된다.

5. 데이터는 이론적으로 ID와 동일하며 IDM은 실제 애플리케이션에서 총 전력 손실에 의해 제한되어야합니다.

6. 패키지 제한 전류는 85A입니다.

Mosfet 80n03 (1)Mosfet 80n03 (2)Mosfet 80n03 (3)Mosfet 80n03 (4)


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