30V 전자 담배 라이터 Mosfet 80N03
$0.23≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1000 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
$0.23≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1000 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-80N03
상표: YZPST
판매 단위 | : | Piece/Pieces |
포장 종류 | : | 1. 정전기 방지 포장 2. 판지 상자 3. 플라스틱 보호 포장 |
전자 시가 라이터 Mosfet
YZPST-80N03
VDSS 30V RDS(ON) 4mΩ(max.)@ VGS=10V RDS(ON) 6mΩ(max.)@ VGS=4.5V ID 100A |
|
Description |
DFN5X6-8L |
YZPST 80N03 uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. |
|
Applications |
Features |
■ Lithium-Ion Secondary Batteries ■ Load Switch ■ DC-DC converters and Off-line UPS |
■ Low On-Resistance ■ Low Input Capacitance ■ Low Miller Charge ■ Low Input / Output Leakage |
Absolute Maximum Ratings (TA=25°C unless otherwise noted) |
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Parameter |
Symbol |
Value |
Unit |
Drain-Source Voltage |
VDSS |
30V |
V |
Gate-Source Voltage |
VGSS |
±20V |
V |
Drain Current-Continuous @ TC=25℃ NOTE1, 6 |
ID |
100 |
A |
Drain Current-Continuous @ TC=100℃ NOTE1, 6 |
80 |
A |
|
Drain Current-Continuous @ TA=25℃ NOTE1 |
ID |
20 |
A |
Drain Current-Continuous @ TA=100℃ NOTE1 |
15 |
A |
|
Drain Current-Pulsed NOTE 2 |
IDM |
216 |
A |
Avalanche Current |
IAS |
53.8 |
A |
Avalanche Energy NOTE 3 |
EAS |
144.7 |
mJ |
Maximum Power Dissipation @ TC=25℃ NOTE4 |
PD |
69 |
W |
Maximum Power Dissipation @ TA=25℃ NOTE4 |
2 |
W |
|
Storage Temperature Range |
TSTG |
-55 to 150°C |
°C |
Operating Junction Temperature Range |
TJ |
-55 to 150°C |
°C |
Thermal Resistance Ratings |
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Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
Maximum Junction-to-Ambient NOTE1 |
RθJA |
Steady State |
- |
- |
62 |
°C/W |
Maximum Junction-to-Case NOTE1 |
RθJC |
Steady State |
- |
- |
1.8 |
°C/W |
Electrical Characteristics(TJ=25°C unless otherwise noted) |
||||||
Parameter |
Symbol |
Conditions |
Min. |
Typ. |
Max. |
Unit |
OFF CHARACTERISTICS |
||||||
Drain-Source Breakdown Voltage |
BVDSS |
VGS=0V , IDS=250uA |
30 |
- |
- |
V |
Zero Gate Voltage Drain Current |
IDSS |
VDS=24V, VGS=0V |
- |
- |
1 |
uA |
Gate-Source Leakage Current |
IGSS |
VGS=±20V , VDS=0V |
- |
- |
±100 |
nA |
ON CHARACTERISTICS |
||||||
Gate Threshold Voltage |
VGS(TH) |
VGS=VDS, IDS=250uA |
1.2 |
- |
2.5 |
V |
Drain-Source On-Resistance NOTE2 |
RDS(ON) |
VGS=10V , IDS=30A |
- |
- |
4 |
mΩ |
VGS=4.5V , IDS=20A |
- |
- |
6 |
mΩ |
||
Forward Transconductance |
gfs |
VDS=5V , ID=30A |
- |
26.5 |
- |
S |
Gate Resistance |
Rg |
VDS=0V , VGS=0V , f=1MHz |
- |
1.4 |
- |
Ω |
DYNAMIC CHARACTERISTICS |
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Input Capacitance |
Ciss |
VDS=15V, VGS=0V, f=1MHz |
- |
3080 |
- |
pF |
Output Capacitance |
Coss |
- |
410 |
- |
||
Reverse Transfer Capacitance |
Crss |
- |
316 |
- |
||
SWITCHING CHARACTERISTICS |
||||||
Turn-On Delay Time |
Td(on) |
VDS=15V, VGS=10V, ID=15A , RGEM=3.3Ω |
- |
9.6 |
- |
ns |
Rise Time |
tr |
- |
20.8 |
- |
||
Turn-Off Delay Time |
Td(off) |
- |
58 |
- |
||
Fall Time |
tf |
- |
16 |
- |
||
Total Gate Charge at 4.5V |
Qg |
VDS=15V, IDS=15A, VGS=4.5V |
- |
32 |
- |
nC |
Gate to Source Gate Charge |
Qgs |
- |
9.1 |
- |
||
Gate to Drain "Miller" Charge |
Qgd |
- |
12.2 |
- |
||
SWITCHING CHARACTERISTICS |
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Drain-Source Diode Forward Voltage 2 |
VSD |
VGS=0V, IS=1A |
- |
- |
1.0 |
V |
Continuous Source Current NOTE1, 5 |
IS |
VG=VD=0V , Force Current |
- |
- |
100 |
A |
Pulsed Source Current NOTE2,5 |
ISM |
- |
- |
216 |
A |
노트:
1. 2 인치 구리선이있는 1 인치 2 FR-4 보드에 표면 실장하여 테스트 한 데이터.
2. 펄스, 펄스 폭 ≦ 300us, 듀티 사이클 ≦ 2 %
3. EAS 데이터는 Max. 평가. 테스트 조건은 VDD = 25V, VGS = 10V, L = 0.1mH, IAS = 53.8A
4. 전력 소비는 175 ℃ 접합 온도에 의해 제한된다.
5. 데이터는 이론적으로 ID와 동일하며 IDM은 실제 애플리케이션에서 총 전력 손실에 의해 제한되어야합니다.
6. 패키지 제한 전류는 85A입니다.
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