가장 인기있는 스터드 트리 아스 스터드 사이리스터 YZPST-KS150-1800V
$382-49 Piece/Pieces
$25≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | Shanghai |
$382-49 Piece/Pieces
$25≥50Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-KS150-1800V
상표: yzpst
공급 유형: 원래 제조업체, ODM, 대리점, 다른
참고 자료: 사진, 데이터 시트, 다른
작동 온도: -40 ° C ~ 125 ° C, -40 ° C ~ 150 ° C
ITRMS: 150A
ITSM: 2000A
I2t: 16KA2s
VDRM / VRRM: 1800V
구성: 단일, 정렬
YZPST-KS150-1800V
가장 인기있는 스터드 트리 아스 스터드 사이리스터 YZPST-KS150-1800V
최대 등급 및 특성
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITRMS |
RMS value of on-state current |
150 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
2000 |
A
|
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I2t |
I square t |
16 |
KA2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
- |
mA |
VD = 24 V; RL= 12 ohms |
|
IH |
Holding current |
- |
mA |
VD = 24 V; I = 2.5 A |
|
VTM |
Peak on-state voltage |
1.65 |
V |
ITM = 450 A; Tj = 25 oC |
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
- |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
10 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
1800 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
1900 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
25 |
mA |
Tj = 100 oC ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
300 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
4 |
W |
|
|
PGM |
Peak gate power dissipation |
15 |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
150 |
mA |
TC = 25 oC |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 oC |
|
VGD |
Gate non-trigger voltage |
- |
V |
Tj = 125 oC |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
- |
ms |
ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs |
|
td |
Delay time |
- |
Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
||
Qrr |
Reverse recovery charge |
- |
|
|
열 및 기계적
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
oC |
|
Tstg |
Storage temperature |
-40~150 |
oC |
|
R th (j-c) |
Thermal resistance - junction to case |
0.13 |
oC/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.075 |
oC/W |
Single sided cooled |
P |
Mounting force |
31 |
Nm |
± 10 % |
W |
Weight |
- |
g |
about |
개요
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