5200V BV 인증 사이리스터 드라이버

VRRM (1)

VDRM (1)

VRSM (1)

5200

5200

5300

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

30 mA

95mA (3)

Critical rate of voltage rise

dV/dt (4)

2000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. Average value of on-state current

I_T(AV)M

3600

A

Sinewave,180^o conduction T_C = 70 ^oC

RMS value of on-state current

I_TRMS

5850

A

Nominal value

Peak one cpstcle surge

(non repetitive) current

I_TSM

63

kA

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

19.8×10³

kA²s

Latching current

I_L

500

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

125

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

1.54

V

I_TM =3000 A; T_vj=125℃

Threshold voltage

V_TO

1.03

V

T_vj=125℃

Slope resistance

R_t

0.16

mΩ

T_vj=125℃

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from V_DRM £ 1500 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

200

A/ms

Switching from V_DRM £ 1500 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

-

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

7

W

Peak gate current

I_GM

10

A

Gate current required to trigger all units

I_GT

-

400

-

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

2.6

-

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

10

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

-

ms

I_TM =50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

700

ms

I_TM = 2000 A; di/dt = 1.5 A/ms;

V_R ³200 V; Re-applied dV/dt = 20 V/ms linear to 67% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cpstcle ³ 0.01%

Reverse recovery charge

Q_rr

5200

mAs

I_TM = 2000 A; di/dt = 1.5 A/ms;

V_R ³200 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+140

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

5.7

11.4

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

1

2

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to heatsink

R_{Q (j-s)}

-

-

K/kW

Double sided cooled *

Single sided cooled *

Mounting force

P

81

108

-

kN

Weight

W

-

-

2.9

Kg

Sym

A

B

C

D

H

mm

150

100

108

3.5×3

35±1