고주파 DC 전력 캡슐화 사이리스터
최신 가격을 얻으십시오지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-T700123503BY
상표: yzpst
위상 제어 사이리스터
YZPST-T700123503BY
위상 제어 사이리스터 의 특징 : 중심 증폭 게이트 구성, 압축 결합 캡슐화, 높은 DV/DT 기능 및 스터드 유형, 스레드 인치 또는 메트릭. 고주파 사이리스터의 전형적인 응용은 중간 전력 스위칭 및 DC 전원 공급 장치입니다.
최대 등급 및 특성
Symbol |
Parameter |
Values |
Units |
Test Conditions |
|
ON-STATE |
|
|
|
||
ITAV |
Mean on-state current |
350 |
A |
Sinewave,180° conduction,Tc=85℃ |
|
ITRMS |
RMS value of on-state current |
550 |
A |
Nominal value |
|
ITSM |
Peak one cycle surge (non repetitive) current |
9.1 |
KA |
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I2t |
I square t |
416 |
KA2s |
8.3 msec and 10.0 msec |
|
IL |
Latching current |
- |
mA |
VD = 24 V; RL= 12 ohms |
|
IH |
Holding current |
- |
mA |
VD = 24 V; I = 2.5 A |
|
VTM |
Peak on-state voltage |
1.4 |
V |
ITM = 625 A; Duty cycle £ 0.01%
|
|
di/dt |
Critical rate of rise of on-state current |
non-repetitive |
800 |
A/ms |
Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax, anode voltage≤80% VDRM |
repetitive |
150 |
||||
BLOCKING |
|
|
|
||
VDRM VRRM |
Repetitive peak off state voltage Repetitive peak reverse voltage |
1200 |
V |
|
|
VDSM VRSM |
Non repetitive peak off state voltage Non repetitive peak reverse voltage |
1300 |
V |
|
|
IDRM IRRM |
Repetitive peak off state current Repetitive peak reverse current |
30 |
mA |
Tj = 125 oC ,VRRM VDRM applied |
|
dV/dt |
Critical rate of voltage rise |
1000 |
V/ms |
TJ=TJmax, linear to 80% rated VDRM |
|
TRIGGEING |
|
|
|
||
PG(AV) |
Average gate power dissipation |
3 |
W |
|
|
PGM |
Peak gate power dissipation |
16 |
W |
|
|
IGM |
Peak gate current |
- |
A |
|
|
IGT |
Gate trigger current |
150 |
mA |
TC = 25 oC |
|
VGT |
Gate trigger voltage |
3.0 |
V |
TC = 25 oC |
|
VGD |
Gate non-trigger voltage |
0.15 |
V |
Tj = 125 oC |
|
SWITCHING |
|
|
|
||
tq |
Turn-off time |
150 |
ms |
ITM=550A, TJ=TJmax, di/dt=40A/μs, VR=50V, dv/dt=20V/μs, Gate 0V 100Ω, tp=500μs |
td |
Delay time |
- |
|
Gate current A, di/dt=40A/μs, Vd=0.67%VDRM, TJ=25 oC |
Qrr |
Reverse recovery charge |
- |
|
|
열 및 기계적
Symbol |
Parameter |
Values |
Units |
Test Conditions |
Tj |
Operating temperature |
-40~125 |
oC |
|
Tstg |
Storage temperature |
-40~150 |
oC |
|
R th (j-c) |
Thermal resistance - junction to case |
0.1 |
oC/W |
DC operation ,Single sided cooled |
R th (c-s) |
Thermal resistance - case to sink |
0.05 |
oC/W |
Single sided cooled |
P |
Mounting force |
3.5 |
Nm |
|
W |
Weight |
- |
g |
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