높은 서지 기능 330A 양방향 scr triac
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1000 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
$5.92-999 Piece/Pieces
$4.5≥1000Piece/Pieces
지불 유형: | L/C,T/T,Paypal |
인 코텀: | FOB,CFR,CIF |
최소 주문량: | 1000 Piece/Pieces |
수송: | Ocean,Air |
포트: | Shanghai |
모형: YZPST-SG50AA80-1
상표: YZPST
판매 단위 | : | Piece/Pieces |
포장 종류 | : | 1. 정전기 방지 포장 2. 판지 상자 3. 플라스틱 보호 포장 |
트라이 액 YZPST-SG50AA80
SG50AA80 양방향 scr triac 800V
트라이 액 (ISOLATED TYPE)
SG50AA는 복사기, 전자 레인지, 솔리드 스테이트 스위치, 모터 제어, 조명 제어 및 히터 제어와 같은 광범위한 응용 분야에 적합한 절연 성형 트라이 액입니다.● IT (AV) 50A
● 높은 서지 기능 330A
● 탭 단자
Symbol |
Item |
|
|
|
Unit |
SG50AA80 |
SG50AA120 |
SG50AA160 |
|||
VDRM |
Repetitive Peak Off-State Voltage |
800 |
1200 |
1600 |
V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT(RMS) |
R.M.S. On-State Current |
Tc=58℃ |
50 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
450 |
A |
I2t |
I2t |
Value for one cycle of surge current |
730 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG(AV) |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25℃,VD=1/2VDRM, |
100 |
A/μs |
Tj |
Operating Junction Temperature |
|
-25 to +125 |
℃ |
Tstg |
Storage Temperature |
|
-40 to +125 |
℃ |
|
Mounting Torque(M4) |
Recommended Value 1.0-1.4(10-14) |
1.5(15) |
N.m |
|
Mass |
Typical value |
2 |
g |
한 전기 리터 C H 아라 C t E ristics
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current,
max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current [√ 2 × IT ( RMS )], Inst.
measurement |
1.4 |
V |
|
I + GT1 |
1 |
Gate Trigger Current, max |
Tj=25℃,IT=1A,VD=6V |
80 |
mA |
I -GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
I + GT3 |
3 |
|
- |
||
I -GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
80 |
||
V+ GT1 |
1 |
Gate Trigger Voltage, max |
Tj=25℃,IT=1A,VD=6V |
3 |
V |
V-GT1 |
2 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
V+ GT3 |
3 |
|
- |
||
V-GT3 |
4 |
Tj=25℃,IT=1A,VD=6V |
3 |
||
VGD |
Non-Trigger Gate Voltage, min |
Tj=125℃,VD=1/2VDRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State
Voltage,min. |
Tj=125℃,VD=2/3VDRM,Exoponential wave. |
300 |
V/μs |
|
dv/dt]c |
Critical Rate of Rise off-State
Voltage at commutation, min |
Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms |
200 |
V/μs |
|
IH |
Holding Current, typ. |
Tj=25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
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