TO-94 세라믹 스터드 트라이 액 100A

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

-

A

Sinewave,180° conduction,Tc=100°C

ITRMS

RMS value of on-state current

100

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

900

A

10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 °C

I2t

I square t

4050

A2s

8.3 msec and 10.0 msec

IL

Latching current

100

mA

VD = 12 V; RL= 12 ohms

IH

Holding current

30

mA

VD = 12 V; I = 1 A

VTM

Peak on-state voltage

2.0

V

ITM = 150 A; Duty cycle ≤ 0.01%; Tj = 25 °C

di/dt

Critical rate of rise of on-state current

non-repetitive

300

A/µs

Gate drive 20V, 20Ω, tr≤1μs, Tj=Tjmax,

anode voltage≤80% VDRM

repetitive

50

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

600

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

700

V

IDRM

IRRM

Repetitive  peak  off  state  current

Repetitive peak reverse   current

10

mA

Tj = 125 °C ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

100

V/µs

TJ=TJmax, linear to 80% rated VDRM

TRIGGEING

PG(AV)

Average gate power dissipation

-

W

PGM

Peak gate power dissipation

-

W

IGM

Peak gate current

-

A

IGT

Gate trigger current

200

mA

TC = 25 °C

VGT

Gate trigger voltage

3.0

V

TC = 25 °C

VT(T0)

Treshold voltage

1

V

rT

Slope resistance

2.4

mΩ

VGD

Gate non-trigger voltage

0.2

V

Tj = 125 °C

SWITCHING

tq

Turn-off time

-

µs

Tj = 125 °C

td

Delay time

-

Gate current 1A, di/dt=1A/μs,

Vd=0.67%VDRM, TJ=25 °C

Qrr

Reverse recovery charge

-

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

°C

Tstg

Storage temperature

-40~150

°C

R th (j-c)

Thermal  resistance  -  junction  to

case

0.4

°C/W

DC operation ,Single sided

cooled

R th (c-s)

Thermal resistance - case to sink

0.08

°C/W

Single sided cooled

P

Mounting force

-

Nm

W

Weight

-

g

about