트라이 액 bt134 scr bt134 트라이 액 사이리스터

Symbol

Value

Unit

I_T(RMS)

2

A

V_DRM / V_RRM

≥600

V

I_{GT 4}

6-10

mA

Symbol

Parameter

Value

Unit

I_T(RMS)

Rms on-state current(full sine wave)

2

A

I_TSM

Non- repetitive Peak on-state

Current (T_j=25℃,tp=20ms)

25

A

I²t

I²t  for fusing(tp=10ms)

2.6

A²S

IGM

Peak gate current

2

A

VGM

Peak gate voltage

5

V

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

dIT/dt

Repetitive rate of rise of on-state current after triggering

(I_T=6A,I_G=0.2A,dl_G/dt=0.2A/us)

Ⅰ-Ⅱ-Ⅲ

50

A/μs

Ⅳ

10

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+110

℃

Symbol

Parameter

Value

Unit

Rth (j-c)

Thermal Resistance,Junction to case

3.0

℃/W

Rth (j-a)

Thermal Resisatance,Junction to ambient

60

℃/W

Symbol

 Test Conditions

Quadrant

Value

Unit

IGT

VD=12V, RL=30Ω, IT=0.1A

Ⅰ-Ⅱ-Ⅲ

max

8

mA

Ⅳ

min

6

max

10

VGT

VD=12V, RL=30Ω

ALL

max

1.5

V

VGD

VD=V_DRM, RL=3.3KΩ Tj=110℃

ALL

min

0.2

V

IH

VD=12V, IT=0.1A

ALL

max

10

mA

Il

VD=12V ,IG=1.21GT

Ⅰ-Ⅲ

max

10

mA

Ⅱ-Ⅳ

15

dV/dt

VD=67%V_DRM, GateOpen,Tj=110℃

min

10

v/μs

VTM

IT=5A,tp=380μs

ALL

max

1.7

V

I_DRM

I_RRM

VD=V_DRM

VR=V_RRM

T_j=25℃

max

0.01

mA

T_j=125℃

0.2