TO-220P 16A 트라이 액 BT139 애플리케이션

Symbol

Value

Unit

I_T(RMS)

16

A

V_DRM / V_RRM

≥600

V

I_TSM

140

A

Symbol

Parameter

Value

Unit

I_T(RMS)

RMS on-state current(full sine wave)

16

A

I_TSM

Non- repetitive Peak on-state

Current (full cycle,T_j=25℃,F=50Hz,tp=20ms)

140

A

I²t

I²t Value for fusing(tp=10ms)

98

A²S

IGM

Peak gate current

2

A

VGM

5

V

PGM

5

W

PG(AV)

Average gate power

0.5

W

di/dt

Repetitive rate of rise of on-state current after triggering

(I_T=6A,I_G=0.2A,dI_G/dt=0.2A/μs)

Ⅰ-Ⅱ-Ⅲ

50

A/μs

Ⅳ

10

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

℃

Symbol

Parameter

Conditions

Min

Type

Max

Unit

Rth j-mb

Thermal Resisatance,Junction to mb

One cycle

Half cycle

--

--

--

--

4.0

1.7

K/W

K/W

Rth j-a

Thermal Resisatance,Junction to ambient

--

--

55

--

K/W

Symbol

Test Conditions

Min

Type

Max

Unit

I_GT

    V_D=12V  R_L=30Ω

   T2+ G+

  T2+ G-

  T2- G-

--

--

--

10

15

20

10

25

25

mA

mA

mA

I_H

V_D=12V I_GT=0.1A

6

50

mA

V_TM

I_T=20A

--

1.3

1.7

V

I _DRM

V _DRM=520V

20

μA

I_RRM

V_RRM=520V

20

μA

V_GT

V_D=12V  R_L=30Ω

0.7

1.65

V

I_D

V_D=V_DRM(_MAX)

Tj=125℃

--

0.1

0.5

mA

Symbol

Test  Conditions

Min

Type

Max

Unit

dV_D/dt

V_DM=67%V_Dm(_MAX)

Tj=125℃,gate open

50

250

--

V/μs

dV_COM/dt

V_DM=400V Tj=95℃

I_T(_RMS)=12A

dL_COM/dt=5.4A/ms,gate open

-

-

10

20

--

V/μs